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标 题 |
更新时间 |
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ABB GTO二极管5SGA 30J2501
Gate turn-off Thyristor5SGA 30J2501VDRM= 2500 VITGQM= 2800 AITSM=30 kAVT0=1.5 VrT= 0.33 mVDClink= 1400 V 专利自由漂浮
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2025-01-24 |
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ABB GTO二极管5SGA 25H2501
Gate turn-off Thyristor5SGA 25H2501VDRM= 2500 VITGQM= 2500 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技
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2025-01-24 |
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ABB GTO二极管5SGA 20H2501
Gate turn-off Thyristor5SGA 20H2501VDRM= 2500 VITGQM= 2000 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技
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2025-01-23 |
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ABB GTO二极管5SGA 15F2502
Asymmetric Gate turn-offThyristor5SGA 15F2502VDRM=2500 VITGQM=1500 AITSM= 10103AVT0=1.45 VrT=0.90 mWVDclink=1400 V 专利
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2025-01-23 |
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ABB IGBT模块5SNA 1000G650300
供应ABB高压IGBT模块5SNA1000G6503005SNA 1000G650300HiPak IGBT moduleVCE = 6500 VIC = 1000 A超低损耗、坚固耐用的SPT++芯片
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2025-01-23 |
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ABB IGBT模块5SNA 0750G650300
ABB IGBT模块5SNA0750G650300ABB HiPakIGBT Module5SNA 0750G650300VCE = 6500 VIC = 750 A低损耗、坚固耐用的SPT芯片组平滑切换
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2025-01-22 |
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ABB IGBT模块5SLD 0600J650100
供应ABB高压IGBT模块5SLD 0600J650100价格：电议/面议起订量： 1供货总量： 999发货期： 10天内发货包装说明:： 盒装产品规格：
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2025-01-22 |
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ABB IGBT模块5SNA0600G650100
ABB IGBT模块5SNA0600G650100ABB HiPakTMIGBT Module5SNA 0600G650100VCE = 6500 VIC = 600 A低损耗、坚固耐用的SPT芯片组平滑切
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2025-01-22 |
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